MPSA44B

UTC MPSA 44B NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V *Collector current up to 300mA *Complement to MPSA94 *Collector Dissipation: Pc(max)=625mW 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR *Pb-free plating product number: MPSA44BL ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector dissipation(Ta=25℃) Pc Collector dissipation(Tc=25℃) Pc www.DataSheet4U.com Collector current Ic Junction Temperature Tj Storage Temperature Tstg RATINGS 500 400 6 625 1.5 300 150 -55 ~ +150 UNIT V V V mW W mA ℃ ℃ ELECTRICAL CHARACTERISTICS (Tj=25℃,unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain(note) SYMBOL BVCBO BVCEO BVEBO ICBO ICES IEBO hFE TEST CONDITIONS Ic=100µA, IB=0 Ic=1mA, IB=0 IE=100µA, Ic=0 VCB=400V,IE=0 VCE=400V,IB=0 VEB=4V,Ic=0 VCE=10V, Ic=1mA VCE=10V, Ic=10mA VCE=10V, Ic=50mA VCE=10V, Ic=100mA Ic=1mA, IB=0.1mA Ic=10mA, IB=1mA Ic=50mA, IB=5mA Ic=10mA, IB=1mA VCE=20V, Ic=10mA, f=100MHz VCB=20V, IE=0, f=1MHz MIN 500 400 6 TYP MAX UNIT V V V µA µA µA 0.1 0.5 0.1 40 50 45 40 240 Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance...