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M28S Dataheets PDF



Part Number M28S
Manufacturers UTC
Logo UTC
Description AUDIO OUTPUT DRIVER AMPLIFIER
Datasheet M28S DatasheetM28S Datasheet (PDF)

M28S UNISONIC TECHNOLOGIES CO., LTD NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER  FEATURES * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation 1 3 TO-92  APPLICATION * Audio Output Driver Amplifier * General Purpose Switch 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package M28SL-x-AE3-R M28SG-x-AE3-R SOT-23 M28SL-x-T92-B M28SG-x-T92-B TO-92 M28SL-x-T92-K M28SG-x-T92-K TO-92 Note: Pin Assignment: B:.

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M28S UNISONIC TECHNOLOGIES CO., LTD NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER  FEATURES * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation 1 3 TO-92  APPLICATION * Audio Output Driver Amplifier * General Purpose Switch 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package M28SL-x-AE3-R M28SG-x-AE3-R SOT-23 M28SL-x-T92-B M28SG-x-T92-B TO-92 M28SL-x-T92-K M28SG-x-T92-K TO-92 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BEC ECB ECB Packing Tape Reel Tape Box Bulk  MARKING SOT-23 NBJ L: Lead Free G: Halogen Free TO-92 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-015.F M28S NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 40 V Collector-emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.25 A Base Current IB 0.4 A Power Dissipation (TA=25°C) SOT-23 TO-92 PD 300 mW 850 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain (Note) Collector-Emitter Saturation Voltage SMALL-SIGNAL CHARACTERISTICS Current Gain Bandwidth Product Output Capacitance SYMBOL VCBO VCEO VEBO ICBO IEBO hFE1 hFE2 hFE3 hFE4 VCE(SAT) fT COB  CLASSIFICATION OF hFE2 RANK RANGE B 300-550 TEST CONDITIONS IC=0.1mA IC=1mA IE=0.1mA VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=1mA VCE=1V, IC=0.1A VCE=1V, IC=0.3A VCE=1V, IC=0.5A IC=600mA, IB=20mA VCE=10V, IC=50mA, f=1MHz VCB=10V, IE=0, f=1MHz C 500-700 MIN TYP MAX UNIT 40 V 20 V 6V 100 nA 100 nA 290 300 1000 300 300 0.55 V 100 9 MHz pF D 650-1000 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R201-015.F M28S NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product des.


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