2SC2290A

2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 60WPEP (Min.) : Gp = 11.8dB (Min.) : ηC = 35% (Min.) Intermodulation Distortion : IMD = −30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 45 45 18 4 20 175 175 www.DataSheet4U.com UNIT V V V V A W °C °C −65~175 JEDEC EIAJ TOSHIBA Weight: 5.2g — — 2−13B1A MARKING 2SC2290 JAPAN TOSHIBA Dot Lot No. 1 2005-03-09 2SC2290A ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Output Capacitance Power Gain Input Power Collector Efficiency Intermodulation Distortion Series Equivalent Input Impedance Series Equivalent Output Impedance SYMBOL V (BR) CEO V (BR) CES V (BR) EBO hFE Cob Gp Pi ηC IMD Zin Zout VCC = 12.5V, f1 = 28.000MHz, f2 = 28.001MHz Po = 60WPEP TEST CONDITION IC = 100mA, IB = 0 IC = 100mA, VEB = 0 IE = 1mA, IC = 0 VCE = 5V, IC = 10A * VCB = 12.5V, IE = 0 f = 1MHz VCC = 12.5V, f1 = 28.000MHz, f2 = 28.001MHz Iidle = 50mA Po = 60WPEP (Fig.) MIN...