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MMBT4401 Dataheets PDF



Part Number MMBT4401
Manufacturers UTC
Logo UTC
Description NPN GENERAL PURPOSE AMPLIFIER
Datasheet MMBT4401 DatasheetMMBT4401 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3  DESCRIPTION The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 2 1 SOT-23 (JEDEC TO-236) 3 12 SOT-323  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBT4401L-AE3-R MMBT4401G-AE3-R SOT-23 MMBT4401L-AL3-R MMBT4401G-AL3-R SOT-323 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignme.

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UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3  DESCRIPTION The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 2 1 SOT-23 (JEDEC TO-236) 3 12 SOT-323  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBT4401L-AE3-R MMBT4401G-AE3-R SOT-23 MMBT4401L-AL3-R MMBT4401G-AL3-R SOT-323 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BEC BEC Packing Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R206-035.I MMBT4401 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) (Note) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage Emitter-Base Voltage VCEO 40 V VEBO 6 V Collector Current-Continuous Total Device Dissipation Derate above 25°C IC 600 mA PD 350 mW 2.8 mW/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  THERMAL CHARACTERISTICS (TA=25°C, unless otherwise specified) CHARACTERISTIC Junction to Ambient SYMBOL θJA RATING 357 UNIT °C/W  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (note) Emitter-Base Breakdown Voltage Collector Cut-off Current Base Cut-off Current ON CHARACTERISTICS (note) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage BVCBO BVCEO BVEBO ICEX IBL IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCE=35V, VEB=0.4V VCE=35V, VEB=0.4V hFE1 VCE=1V, IC=0.1mA hFE2 VCE=1V, IC=1mA hFE3 VCE=1V, IC=10mA hFE4 VCE=1V, IC=150mA hFE5 VCE=2V, IC=500mA VCE(SAT1) IC=150mA, IB=15mA VCE(SAT2) IC=500mA, IB=50mA VBE(SAT1) IC=150mA, IB=15mA VBE(SAT2) IC=500mA, IB=50mA SMALL SIGNAL CHARACTERISTICS1 Current Gain Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance fT VCE=10V, IC=20mA, f=100MHz CCB VCB=5V, IE=0, f=140kHz CEB VBE=0.5V, IC=0, f=140kHz hIE VCE=10V, IC=1mA, f=1kHz hRE VCE=10V, IC=1mA, f=1kHz hFE VCE=10V, IC=1mA, f=1kHz hOE VCE=10V, IC=1mA, f=1kHz SWITCHING CHARACTERISTICS Delay Time tD VCC=30V, VEB=2V, IC=150mA IB1=15mA Rise Time tR VCC=30V, VEB=2V, IC=150mA IB1=15mA Storage Time tS Fall Time tF VCC=30V, IC=150mA IB1= IB2=15mA Note: Pulse test: PulseWidth ≤ 300s, Duty Cycle ≤ 2%. MIN TYP MAX UNIT 60 V 40 V 6V µA µA 20 40 80 100 300 40 0.4 V 0.75 V 0.75 0.95 V 1.2 V 250 MHz 6.5 pF 30 pF 1 15 kΩ 0.1 8 ×10-4 40 500 1 30 µmhos 15 ns 20 ns 225 ns 30 ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R206-035.I MMBT4401  TEST CIRCUIT 16V 0 ≤220ns NPN SILICON TRANSISTOR 30V 1KΩ 200Ω 500Ω Figure1. Saturated Turn-On Switching Timer Note:BVEBO=5V 30V 0 ≤220ns -1.5V 6V 1k 37Ω 1KΩ 50Ω Figure2. Saturated Turn-Off Switching Timer UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R206-035.I Typical Pulsed Current Gain, hFE MMBT4401  TYPICAL CHARACTERISTICS Typical Pulsed Current Gain vs Collector Current 500 VCE =5V 400 300 125 C 200 25 C 100 -40 C 00.1 0.3 1 3 10 30 100 300 Collector Current, IC (mA) Collector-Emitter Voltage, VCESAT (V) NPN SILICON TRANSISTOR Collector-Emitter Saturation Voltage vs Collector Current 0.4 β=10 0.3 125 C 0.2 25 C 0.1 -40 C 1 10 100 500 Collector Current, IC (mA) Base-Emitter OnVoltage, VBEON (V) Base-Emitter Voltage, VBESAT (V) Collector-Cutoff Current 500 vs Ambient Temperature 100 VCB=40V 10 1 0.1 25 50 75 100 125 150 Ambient Temperature, TA(℃) Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 f=1MHz 16 Cte 12 8 Cob 4 0.1 1 10 100 Reverse Bias Voltage (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R206-035.I MMBT4401  TYPICAL CHARACTERISTICS (Cont.) Turn On and Turn Off Times vs Collector Current 400 320 IB1=IB2= IC 10 VCC =25V 240 160 80 toff ton 100 100 1000 Collector Current, IC (mA) NPN SILICON TRANSISTOR Switching Times vs Collector Current 400 320 IB1=IB2= IC 10 VCC =25V 240 160 tS 80 tF tR tD 010 100 1000 Collector Current, IC (mA) Char.Relative To Voltage At IC=10mA Power Dissipation, PD (W) Char.Relative To Voltage at VCE=10V Char.Relative To Voltage at TA=25℃ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R206-035.I MMBT4401  TYPICAL CHARACTERISTICS (Cont.) 1400 1200 S.O.A 1000 800 600 400 200 100 8.


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