Document
UNISONIC TECHNOLOGIES CO., LTD
MMBT4401
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE AMPLIFIER
3
DESCRIPTION
The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA.
2 1
SOT-23
(JEDEC TO-236)
3
12
SOT-323
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
MMBT4401L-AE3-R
MMBT4401G-AE3-R
SOT-23
MMBT4401L-AL3-R
MMBT4401G-AL3-R
SOT-323
Note: Pin Assignment: B: Base E: Emitter C: Collector
Pin Assignment 123 BEC BEC
Packing
Tape Reel Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R206-035.I
MMBT4401
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) (Note)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO 60 V
Collector-Emitter Voltage Emitter-Base Voltage
VCEO 40 V VEBO 6 V
Collector Current-Continuous Total Device Dissipation Derate above 25°C
IC 600 mA
PD
350 mW 2.8 mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
CHARACTERISTIC Junction to Ambient
SYMBOL θJA
RATING 357
UNIT °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (note) Emitter-Base Breakdown Voltage Collector Cut-off Current Base Cut-off Current ON CHARACTERISTICS (note)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
BVCBO BVCEO BVEBO
ICEX IBL
IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCE=35V, VEB=0.4V VCE=35V, VEB=0.4V
hFE1 VCE=1V, IC=0.1mA hFE2 VCE=1V, IC=1mA hFE3 VCE=1V, IC=10mA hFE4 VCE=1V, IC=150mA hFE5 VCE=2V, IC=500mA VCE(SAT1) IC=150mA, IB=15mA VCE(SAT2) IC=500mA, IB=50mA VBE(SAT1) IC=150mA, IB=15mA VBE(SAT2) IC=500mA, IB=50mA
SMALL SIGNAL CHARACTERISTICS1 Current Gain Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance
fT VCE=10V, IC=20mA, f=100MHz CCB VCB=5V, IE=0, f=140kHz CEB VBE=0.5V, IC=0, f=140kHz hIE VCE=10V, IC=1mA, f=1kHz hRE VCE=10V, IC=1mA, f=1kHz hFE VCE=10V, IC=1mA, f=1kHz hOE VCE=10V, IC=1mA, f=1kHz
SWITCHING CHARACTERISTICS
Delay Time
tD
VCC=30V, VEB=2V, IC=150mA IB1=15mA
Rise Time
tR
VCC=30V, VEB=2V, IC=150mA IB1=15mA
Storage Time
tS
Fall Time
tF
VCC=30V, IC=150mA IB1= IB2=15mA
Note: Pulse test: PulseWidth ≤ 300s, Duty Cycle ≤ 2%.
MIN TYP MAX UNIT
60 V 40 V 6V
µA µA
20
40
80
100 300
40
0.4 V
0.75 V
0.75
0.95 V 1.2 V
250 MHz 6.5 pF 30 pF
1 15 kΩ 0.1 8 ×10-4 40 500 1 30 µmhos
15 ns
20 ns 225 ns 30 ns
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QW-R206-035.I
MMBT4401
TEST CIRCUIT
16V 0
≤220ns
NPN SILICON TRANSISTOR
30V
1KΩ
200Ω
500Ω
Figure1. Saturated Turn-On Switching Timer
Note:BVEBO=5V 30V
0 ≤220ns
-1.5V 6V 1k 37Ω
1KΩ 50Ω
Figure2. Saturated Turn-Off Switching Timer
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Typical Pulsed Current Gain, hFE
MMBT4401
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain vs Collector Current
500 VCE =5V
400 300 125 C
200 25 C
100 -40 C
00.1 0.3 1 3 10 30 100 300 Collector Current, IC (mA)
Collector-Emitter Voltage, VCESAT (V)
NPN SILICON TRANSISTOR
Collector-Emitter Saturation Voltage vs Collector Current
0.4
β=10 0.3
125 C 0.2
25 C 0.1
-40 C
1 10 100 500 Collector Current, IC (mA)
Base-Emitter OnVoltage, VBEON (V)
Base-Emitter Voltage, VBESAT (V)
Collector-Cutoff Current 500 vs Ambient Temperature 100 VCB=40V
10
1
0.1
25 50 75 100 125 150 Ambient Temperature, TA(℃)
Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 f=1MHz
16 Cte
12
8 Cob
4 0.1 1 10 100
Reverse Bias Voltage (V)
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TYPICAL CHARACTERISTICS (Cont.)
Turn On and Turn Off Times
vs Collector Current 400
320
IB1=IB2=
IC 10
VCC =25V
240
160
80 toff
ton 100 100 1000
Collector Current, IC (mA)
NPN SILICON TRANSISTOR
Switching Times
vs Collector Current 400
320
IB1=IB2=
IC 10
VCC =25V
240
160 tS
80 tF tR tD
010 100 1000 Collector Current, IC (mA)
Char.Relative To Voltage At IC=10mA
Power Dissipation, PD (W)
Char.Relative To Voltage at VCE=10V
Char.Relative To Voltage at TA=25℃
UNISONIC TECHNOLOGIES CO., LTD
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TYPICAL CHARACTERISTICS (Cont.)
1400 1200
S.O.A
1000 800 600 400 200 100 8.