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50N06

UTC

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 50N06 is thre...


UTC

50N06

File Download Download 50N06 Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.  FEATURES * RDS(ON) ≤ 23mΩ @ VGS=10V, ID=25A * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability  SYMBOL 2.Drain 1 1 1 TO-220 TO-220F 1 TO-220F1 TO-220F3 1 TO-263 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 50N06L-TA3-T 50N06G-TA3-T TO-220 50N06L-TF1-T 50N06G-TF1-T TO-220F1 50N06L-TF3-T 50N06G-TF3-T TO-220F 50N06L-TF3T-T 50N06G-TF3T-T TO-220F3 50N06L-TQ2-T 50N06G-TQ2-T TO-263 50N06L-TQ2-R 50N06G-TQ2-R TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-088.J 50N06  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-088.J 50N06 Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage Continuous Drain Current VGSS ±20 V ID 50 A Pulsed Drain Current (Note 2) Avalanche Energy Single ...




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