S8050

www.DataSheet4U.com S8050 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 25 40 5.0 500 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) Collector Cutoff Current (VCE= 20 Vdc, I B =0) Collector Cutoff Current (VCB= 40 Vdc, IE=0) Emitter Cutoff Current (VEB= 3.0Vdc, I C =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICE0 ICBO IEBO Min 25 40 5.0 Max 0.1 0.1 0.1 Unit Vdc Vdc Vdc uAdc uAdc uAdc WEITRON http://www.weitron.com.tw S8050 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= 50 Adc, VCE=1.0 Vdc) DC Current Gain (IC= 500 mAdc, VCE= 1.0 Vdc) Collector-Emitter Saturation Voltage (IC= 500 Adc, IB= 50 mAdc) Base-Emitter Saturation Voltage (IC= 500 mAdc, IB= 50 mAdc) Current-Gain-Bandwidth Product (IC= 20 mAdc, VCE=6.0 Vdc, f=30MHz) hFE (1) hFE (2) VCE(sat) VBE(sat) fT 85 50 150 - 300 0.6 1.2 Vdc Vdc - - MHz Classification of hFE(1) Rank Range B 85-160 C 120-200 D 160-300 WEITRON http://www.wei...