MLP2N06CL

www.DataSheet4U.com MLP2N06CL Preferred Device SMARTDISCRETESt MOSFET 2 Amps, 62 Volts, Logic Level N−Channel TO−220 This logic level power MOSFET features current limiting for short circuit protection, integrated Gate−Source clamping for ESD protection and integral Gate−Drain clamping for over−voltage protection and Sensefet technology for low on−resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kW gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate−Source and Gate−Drain clamps allow the device to be applied without use of external transient suppression components. The Gate−Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate−Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature. Features http://onsemi.com 2 AMPERES 62 VOLTS (Clamped) RDS(on) = 400 mW N−Channel D R1 G Pb−Free Package is Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TC = 25°C Total Power Dissipation @ TC = 25°C Electrostatic Voltage Operating and Storage Junction Temperature Range Symbol VDSS VDGR VGS ID PD ESD TJ, Tstg Value Clamped Clamped ±10 Self−Limited 40 2.0 –50 t...