MCR8SD

www.DataSheet4U.com MCR8SD, MCR8SM, MCR8SN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed. Features http://onsemi.com Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits Blocking Voltage to 800 Volts On−State Current Rating of 8 Amperes RMS at 80°C High Surge Current Capability − 80 Amperes Rugged, Economical TO−220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dv/dt − 5 V/msec Minimum at 110°C Pb−Free Packages are Available* 1 SCRs 8 AMPERES RMS 400 thru 800 VOLTS G A K MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8SD MCR8SM MCR8SN On-State RMS Current (180° Conduction Angles; TC = 80°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 110°C) Circuit Fusing Consideration (t = 8.33 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RM...