TMD1414-2C

www.DataSheet4U.com MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD1414-2C FEATURES n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm °C °C RATING 10 -10 20 -40 ∼ +90 -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Operating Frequency Output Power at 1dB Gain Compression Point 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency ∆G IDD ηadd G1dB VDD=7V VGG=-5V dB dB A % 21.0    26.0  1.4 29  ±1.0 1.8  SYMBOL CONDITIONS UNIT GHz dBm MIN. 13.75 32.0 TYP. MAX.  34.5 14.5  f P1dB uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Mar.2006 TMD1414-2C PACKAGE OUTLINE (7-BA15A) 4-C1.5 2.4 Unit in mm j k l 2.6 ± 0.2 2....