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MBR835, MBR840, MBR845
Preferred Devices
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency invert...
