MB82D01171A

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-11404-2E MEMORY Mobile FCRAMTM CMOS 16 Mbit (1 M word × 16 bit) Mobile Phone Application Specific Memory MB82D01171A-80/80L/80LL/85/85L/85LL/90/90L/90LL CMOS 1,048,576-WORD × 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface s DESCRIPTION The Fujitsu MB82D01171A is a CMOS Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format. This MB82D01171A is suited for low power applications such as Cellular Handset and PDA. Note: FCRAM is a trademark of Fujitsu Limited, Japan. s PRODUCT LINEUP Parameter Access Time (tAA Max, tCE Max) Active Current (IDDA1 Max) Standby Current (IDDS1 Max) Power Down Current (IDDP Max) MB82D01171A 80 80L 80 ns 80LL 85 85L 85 ns 20 mA 200 µA 100 µA 70 µA 200 µA 100 µA 70 µA 200 µA 100 µA 70 µA 10 µA 85LL 90 90L 90 ns 90LL s PACKAGES 48-ball plastic FBGA 48-ball plastic FBGA (BGA-48P-M16) (BGA-48P-M18) MB82D01171A-80/80L/80LL/85/85L/85LL/90/90L/90LL s FEATURES Asynchronous SRAM Interface 1 M word × 16 bit Organization Fast Random Cycle Time : tRC = 90 ns Fast Random Access Time : tAA = tCE = 80 ns, 85 ns, 90 ns Low Power Consumption : IDDS1 = 200 µA, 100 µA (L version) , 70 µA (LL version) Wide Operating Conditions : VDD = +2.3 V to +2.7 V +2.7 V to +3.1 V +3.1 V to +3.5 V TA = −30 °C to +85 °C Byte Write Control 4 words Address Access Capability ...