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MAC12M

ON Semiconductor

Triacs

MAC12D, MAC12M, MAC12N Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control appl...


ON Semiconductor

MAC12M

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MAC12D, MAC12M, MAC12N Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control applications where high noise immunity and commutating di/dt are required. Features Blocking Voltage to 800 Volts On−State Current Rating of 12 Amperes RMS at 70°C Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 High Immunity to dv/dt − 250 V/ms Minimum at 125°C High Commutating di/dt − 6.5 A/ms Minimum at 125°C Industry Standard TO−220 Package High Surge Current Capability − 100 Amperes These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12D MAC12M MAC12N VDRM, VRRM 400 600 800 Unit V On-State RMS Current (All Conduction Angles; TC = 70°C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.33 ms) IT(RMS) ITSM I2t 12 A 100 A 41 A2sec Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) PGM 16 W Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.35 W Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types ...




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