C122B1

www.DataSheet4U.com C122F1, C122B1 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features http://onsemi.com Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 200 Volts Pb−Free Packages are Available* SCRs 8 AMPERES RMS 50 thru 200 VOLTS G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = 25 to 100°C, Sine Wave, 50 to 60 Hz; Gate Open) C122F1 C122B1 On-State RMS Current (180° Conduction Angles; TC = 75°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TC = 75°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width = 10 ms, TC = 70°C) Forward Average Gate Power (t = 8.3 ms, TC = 70°C) Forward Peak Gate Current (Pulse Width = 10 ms, TC = 70°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 200 IT(RMS) ITSM 8.0 90 A A 1 2 TO−220AB CASE 221A STYLE 3 3 Value Unit V 4 MARKING DIAGRAM A YW C122F1G AKA I2t PGM PG(AV) IGM TJ Tstg 34 5.0 0.5 2.0 −40 to +125 −40 to +150 A2s W W A A Y W C122F1 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−F...