STX817

www.DataSheet4U.com ® STX817 PNP MEDIUM POWER TRANSISTOR Type STX817 Marking X817 s DEVICE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY APPLICATIONS VOLTAGE REGULATION s RELAY DRIVER s GENERIC SWITCH s TO-92 DECRIPTION The STX817 is a PNP transistor manufactured using Planar Technology resulting in rugged high performance devices. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 C Storage Temperature Max. Operating Junction Temperature o Value -120 -80 -5 -1.5 -2 -0.3 -0.6 0.9 -65 to 150 150 Unit V V V A A A A W o o C C April 2002 1/4 STX817 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 44.6 139 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = -120 V V CE = -80 V V EB = -5 V I C = -10 mA -80 Min. Typ. Max. -500 -1 -100 Unit µA mA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I ...