STSJ25NF3LL

www.DataSheet4U.com STSJ25NF3LL N-CHANNEL 30V - 0.0085 Ω - 25A PowerSO-8™ LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STSJ25NF3LL s s s s s VDSS 30 V RDS(on) <0.0105 Ω ID 25 A TYPICAL RDS(on) = 0.0085 Ω @ 10V TYPICAL Qg = 24 nC @ 4.5 V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED IMPROVED JUNCTION-CASE THERMAL RESISTANCE PowerSO-8™ DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. This silicon, housed in thermally improved SO-8™ package, exhibits optimal on-resistance versus gate charge tradeoff plus lower R thj-c. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS DRAIN CONTACT ALSO ON THE BACKSIDE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID ID IDM() Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C (*) Drain Current (continuous) at TC = 25°C (#) Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Total Dissipation at TC = 25°C (#) Value 30 30 ± 16 25 12 16 100 70 3 (*) Value limited by wires bonding Unit V V V A A A A W W () Pulse width limited by safe operating area. October 2003 1/8 NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: 25NF3LL@ STSJ25NF3LL THERMAL DATA Rthj-c Rthj-amb Tj Tstg Thermal Resistance Junction-case (*)Thermal Resistance J...