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STP45NF06L STB45NF06L
N-CHANNEL 60V - 0.022Ω - 38A TO-220 / D2PAK STripFET™ II POWER MOSFET
TYPE ST...
www.DataSheet4U.com
STP45NF06L STB45NF06L
N-CHANNEL 60V - 0.022Ω - 38A TO-220 / D2PAK STripFET™ II POWER MOSFET
TYPE STP45NF06L STB45NF06L
s s s
VDSS 60 V 60 V
RDS(on) < 0.028Ω < 0.028Ω
ID 38 A 38 A
TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY LOGIC LEVEL GATE DRIVE
3 1
1 2
3
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
D2PAK
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 ±16 38 26 152 80 0.53 7 –55 to 175
(1) ISD ≤38A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
Unit V V V A A A W W/°C V/ns °C
(q ) Pulse width limited by safe operating area
September 2002
1/10
STP45NF06L - STB45NF06L
THERMAL DATA
Rthj-case Rthj-amb Tl Th...