STB45NF06

www.DataSheet4U.com N-CHANNEL 60V - 0.022Ω - 38A D2PAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STB45NF06 s s STB45NF06 VDSS 60V RDS(on) <0.028Ω ID 38A TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 ±20 38 26 152 80 0.53 7 –65 to 175 175 (1) I SD ≤38A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C (q) Pulse width limited by safe operating area Aug 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/6 ST...