BC212B

www.DataSheet4U.com BC212B Amplifier Transistors PNP Silicon Features These are Pb−Free Devices* http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value −50 −60 −5.0 −100 350 2.8 1.0 8.0 −55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 17 12 2 BASE COLLECTOR 1 3 EMITTER 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W 3 STRAIGHT LEAD BULK PACK 3 BENT LEAD TAPE & REEL AMMO PACK 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM BC 212B AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC212BG BC212BRL1G Package TO−92 (Pb−Free) TO−92 (Pb−Free) Shipping† 5000 Units / Bulk 2000 / Tape & Reel *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor...