(BAV70LT1 / BAV70LT3) Monolithic Dual Switching Diode Common Cathode
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ON Semiconductort
Monolithic Dual Switching Diode Common Cathode
MAXIMUM RATINGS (EACH DIODE)
Rati...
Description
www.DataSheet4U.com
ON Semiconductort
Monolithic Dual Switching Diode Common Cathode
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc
BAV70LT1
3 1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
CASE 318–08, STYLE 9 SOT–23 (TO–236AB)
3 CATHODE
ANODE 1 2 ANODE
DEVICE MARKING
BAV70LT1 = A4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (Note 3) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time RL = 100 Ω (IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR–5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. For each individual diode while second diode is unbiased.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value...
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