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2N6395

ON Semiconductor

Silicon Controlled Rectifiers

www.DataSheet4U.com 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed ...


ON Semiconductor

2N6395

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Description
www.DataSheet4U.com 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 V Pb−Free Packages are Available* http://onsemi.com SCRs 12 AMPERES RMS 50 thru 800 VOLTS G A Unit V K MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 On-State RMS Current (180° Conduction Angles; TC = 90°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 90°C) Forward Average Gate Power (t = 8.3 ms, TC = 90°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 90°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 100 400 800 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 100 40 20 0.5 2.0 −40 to +125 −40 to +150 A A A2s W W A °C °C 1 2 3 Value MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 3 2N639xG AYWW 2N639x = Device Code x = 4, 5, 7, or 9 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MAXIMUM RATINGS † (TJ =...




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