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STS8NF30L

ST Microelectronics

N-CHANNEL Power MOSFET

www.DataSheet4U.com ® STS8NF30L N - CHANNEL 30V - 0.018Ω - 8A SO-8 STripFET™ POWER MOSFET TYPE STS8NF 30L s s V DSS ...


ST Microelectronics

STS8NF30L

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www.DataSheet4U.com ® STS8NF30L N - CHANNEL 30V - 0.018Ω - 8A SO-8 STripFET™ POWER MOSFET TYPE STS8NF 30L s s V DSS 30 V R DS(on) < 0.022 Ω ID 6 A s TYPICAL RDS(on) = 0.018 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Single O peration Drain Current (continuous) at Tc = 100 o C Single O peration Drain Current (pulsed) T otal Dissipation at Tc = 25 C o o Value 30 30 ± 20 8 5 32 2.5 Un it V V V A A A W I DM ( ) P tot () Pulse width limited by safe operating area December 1999 1/8 STS8NF30L THERMAL DATA R thj -amb Tj T s tg *Thermal Resistance Junction-ambient Maximum O perating Junction Temperature Storage T emperature 50 150 -65 to 150 o o C/W C/W o C (*) Mounted on FR-4 board (Steady State) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unles...




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