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STS8DNF3LL
Dual N-channel 30V - 0.017Ω - 8A SO-8 Low gate charge STripFET™ II Power MOSFET
General features
Type STS8DNF3LL
■ ■ ■
VDSS 30V
RDS(on) <0.020Ω
ID 8A
Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced
S0-8
Description
This application specific Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number STS8DNF3LL Marking S8DNF3LL Package SO-8 Packaging Tape & reel
January 2007
Rev 10
1/12
www.st.com 12
Contents
STS8DNF3LL
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STS8DNF3LL
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDM (1) PTOT
Absolute maximum ratings
Parameter Drain-source voltage (vgs = 0) Gate- source voltage Drain current (continuos) at TC = 25°C single operating Drain current (continuos) at TC = 100°C single operating Drain current (pulsed) Total dissipation at TC = 25°C dual operating Total dissipation at TC = 25°C single operating Value 30 ±16 8 5 32 2 1.6 Unit V V A A A W W
1. Pulse width limited by safe operating area
Table 2.
Rthj-a TJ Tstg
Thermal data
(1)Thermal
resistance junction-ambient single operating Thermal resistance junction-ambient dual operating
78 62.5 150 -55 to 150
°C/W °C/W °C °C
Thermal operating junction-ambient Storage temperature
1. Mounted on FR-4 board with 0.5 in2 pad of Cu.
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Electrical characteristics
STS8DNF3LL
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 3.
Symbol V(BR)DSS
On/off states
Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 µA, VGS = 0 VDS = Max rating VDS=Max rating, TC=125°C VGS = ± 16V VDS = VGS, ID = 250µA VGS = 10V, ID = 4A VGS = 4.5V, ID = 4A 1 0.017 0.020 0.020 0.024 Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA V Ω Ω
IDSS
IGSS VGS(th) RDS(on)
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg.