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STS8DNF3LL Dataheets PDF



Part Number STS8DNF3LL
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description Dual N-CHANNEL Power MOSFET
Datasheet STS8DNF3LL DatasheetSTS8DNF3LL Datasheet (PDF)

www.DataSheet4U.com STS8DNF3LL Dual N-channel 30V - 0.017Ω - 8A SO-8 Low gate charge STripFET™ II Power MOSFET General features Type STS8DNF3LL ■ ■ ■ VDSS 30V RDS(on) <0.020Ω ID 8A Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced S0-8 Description This application specific Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistanc.

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www.DataSheet4U.com STS8DNF3LL Dual N-channel 30V - 0.017Ω - 8A SO-8 Low gate charge STripFET™ II Power MOSFET General features Type STS8DNF3LL ■ ■ ■ VDSS 30V RDS(on) <0.020Ω ID 8A Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced S0-8 Description This application specific Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. Internal schematic diagram Applications ■ Switching application Order codes Part number STS8DNF3LL Marking S8DNF3LL Package SO-8 Packaging Tape & reel January 2007 Rev 10 1/12 www.st.com 12 Contents STS8DNF3LL Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STS8DNF3LL Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (1) PTOT Absolute maximum ratings Parameter Drain-source voltage (vgs = 0) Gate- source voltage Drain current (continuos) at TC = 25°C single operating Drain current (continuos) at TC = 100°C single operating Drain current (pulsed) Total dissipation at TC = 25°C dual operating Total dissipation at TC = 25°C single operating Value 30 ±16 8 5 32 2 1.6 Unit V V A A A W W 1. Pulse width limited by safe operating area Table 2. Rthj-a TJ Tstg Thermal data (1)Thermal resistance junction-ambient single operating Thermal resistance junction-ambient dual operating 78 62.5 150 -55 to 150 °C/W °C/W °C °C Thermal operating junction-ambient Storage temperature 1. Mounted on FR-4 board with 0.5 in2 pad of Cu. 3/12 Electrical characteristics STS8DNF3LL 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source Breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 µA, VGS = 0 VDS = Max rating VDS=Max rating, TC=125°C VGS = ± 16V VDS = VGS, ID = 250µA VGS = 10V, ID = 4A VGS = 4.5V, ID = 4A 1 0.017 0.020 0.020 0.024 Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA V Ω Ω IDSS IGSS VGS(th) RDS(on) Table 4. Symbol gfs (1) Ciss Coss Crss Qg.


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