STS8205

www.DataSheet4U.com S T S 8205 S amHop Microelectronics C orp. J un,08 2005 ver 1.4 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 4A R DS (ON) S uper high dense cell design for low R DS (ON ). 30 @ V G S = 4.0V 46 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D1 D2 TS OP 6 Top View S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 S1 G2 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C -P ulsed b S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 10 4 25 2 1.25 -55 to 150 Unit V V A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 100 C /W 1 S T S 8205 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4.0V, ID = 4A V GS =2.5V, ID = 3A V DS = 5V, ID =4A Min Typ C Max Unit 20 1 V uA 100 nA 0.5 0.8 27 35 13 800 155 125 1.5 30 46 V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource O...