www.DataSheet4U.com
S T U/D3055NL
S amHop Microelectronics C orp. P reliminary May.28,2004
N-C hannel E nhancement Mod...
www.DataSheet4U.com
S T U/D3055NL
S amHop Microelectronics C orp. P reliminary May.28,2004
N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
25V
F E AT UR E S
( m W ) Max
ID
21A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
40@ V G S = 10V 50@ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TU S E R IE S TO-251(l-P AK)
S
AB S OL UTE MAXIMUM R ATINGS
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed (300ms Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange
(T A =25 C unles s otherwis e noted)
S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 25 20 21 52 20 50 -55 to 175 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
1
R JC R JA
3 50
C /W C /W
S T U/D3055NL
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c
S ymbol
Condition
V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =6.0A V GS =4.5V, ID = 5.2A V DS = 5V, V GS = 10V V DS = 10V, ID = 6.0A
Min Typ C Max Unit
25 1 10...