STB19NB20

www.DataSheet4U.com ® STB19NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE ST B19NB20 s s s s s s V DSS 200 V R DS(on) < 0.180 Ω ID 19 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1) T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC o Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junct ion T emperature D2PAK TO-263 (suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM Value 200 200 ± 30 19 12 76 125 1 5.5 -65 to 150 150 ( 1) ISD ≤ 19A, di/dt ≤ 300 ...