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SP8M21
Transistors
4V Drive Nch+Pch MOSFET
SP8M21
zStructure Silicon N-channel MOSFET / Silicon P-...
www.DataSheet4U.com
SP8M21
Transistors
4V Drive Nch+Pch MOSFET
SP8M21
zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions (Unit : mm)
SOP8
5.0 0.4
(8) (5)
1.75
1pin mark
1.27
0.2
Each lead has same dimensions
zApplications Switching zPackage specifications
Package Type SP8M21 Code Basic ordering unit (pieces) Taping TB 2500
∗2 ∗2
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
zInner circuit
(8) (7) (6) (5)
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board.
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Continuous Pulsed Continuous Pulsed
Limits Tr1 : N-ch Tr2 : P-ch 45 −45 20 −20 ±4.0 ±6.0 ±16 ±24 1.0 −1.0 24 −16 2.0 1.4 150 −55 to +150
Unit V V A A A A W / TOTAL W / ELEMENT °C °C
Rev.A
0.4Min.
zFeatures 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small and surface mount package (SOP8).
(1)
(4)
3.9 6.0
1/7
SP8M21
Transistors
N-ch zElectrical characteristics (Ta=25°C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Inpu...