MRF927T1

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF927T1/D The RF Small Signal Line NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency Transistors Designed for use in low voltage, low current applications at frequencies to 2.0 GHz. Specifically aimed at portable communication devices such as pagers and hand–held phones. High Gain (GUmax 15 dB Typ @ 1.0 GHz) @ 1.0 mA Small, Surface–Mount Package (SC–70) High Current Gain–Bandwidth Product at Low Current, Low Voltage (fτ = 8.0 GHz Typ @ 3.0 V, 5.0 mA) Available in Tape and Reel by Adding T1 or T3 Suffix to Part Number. T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel. T3 Suffix = 10,000 Units per 8 mm, 7 inch Reel. MRF927T1 MRF927T3 IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR CASE 419–02, STYLE 3 (SC–70/SOT–323) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 50°C Derate above 50°C Storage Temperature Range Operating Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 10 20 2.5 10 100 1.0 – 55 to +150 150 Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction–to–Case Symbol RθJC Value 1000 Unit °C/W DEVICE MARKING MRF927T1 = F REV 1 MOTOROLA RF DEVICE DATA © Motorola, Inc. 1997 MRF927T1 MRF927T3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Colle...