Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
www.DataSheet4U.com
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The RF MOSFET Line
RF Power Field Effect Transistor
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 950 mA IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 40 Watts Power Gain — 16.5 dB Efficiency — 25.5% Adjacent Channel Power — 750 kHz: - 46.2 dBc @ 30 kHz BW 1.98 MHz: - 60 dBc @ 30 kHz BW • Internally Matched, Controlled Q, for Ease of Use • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts Avg. N - CDMA • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature
N - Channel Enhancement - Mode Lateral MOSFET
MRF9210R3
880 MHz, 200 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375G - 04, STYLE 1 NI - 860C3
Symbol VDSS VGS PD Tstg TJ
Value 65 - 0.5, +15 565 3.2 - 65 to +150 200
Unit Vdc Vdc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.31 Unit °C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum)
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOROLA RF DEVICE DATA Motorola, Inc. 2004
For More Information On This Product, Go to: www.freescale.com
MRF9210R3 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 800 mAdc) VGS(th) VGS(Q) VDS(on) gfs 1.5 2.5 — — 2.8 3.3 0.2 8.8 4 4.5 0.4 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6.7 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
3.6
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier, Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF N - CDMA Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz) N - CDMA Drain Efficiency (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Input Return Loss (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz) N - CDMA Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz) N - CDMA Drain Efficiency (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Input Return Loss (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Each side of device measured separately. (2) Device measured in push - pull configuration. Gps 15.8 16.5 — dB
η
23
25.5
—
%
ACPR
—
- 46.2
- 45
dBc
IRL
9
17.5
—
dB
Gps
—
16.5
—
dB
η
—
25.5
—
%
ACPR
—
- 47.5
—
dBc
IRL
—
15
—
dB
Ψ
No Degradation In Output Power
MRF9210R3 2
For More Information On This Product, Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
Table 1. 880 MHz Test Circuit Component Designations and Values
Part B.