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MRF9210R3 Dataheets PDF



Part Number MRF9210R3
Manufacturers Motorola
Logo Motorola
Description RF Power Field Effect Transistor
Datasheet MRF9210R3 DatasheetMRF9210R3 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. www.DataSheet4U.com Order this document by MRF9210/D The RF MOSFET Line RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 95.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. www.DataSheet4U.com Order this document by MRF9210/D The RF MOSFET Line RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 950 mA IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 40 Watts Power Gain — 16.5 dB Efficiency — 25.5% Adjacent Channel Power — 750 kHz: - 46.2 dBc @ 30 kHz BW 1.98 MHz: - 60 dBc @ 30 kHz BW • Internally Matched, Controlled Q, for Ease of Use • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts Avg. N - CDMA • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature N - Channel Enhancement - Mode Lateral MOSFET MRF9210R3 880 MHz, 200 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET Freescale Semiconductor, Inc... CASE 375G - 04, STYLE 1 NI - 860C3 Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 565 3.2 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.31 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum) (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF9210R3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 800 mAdc) VGS(th) VGS(Q) VDS(on) gfs 1.5 2.5 — — 2.8 3.3 0.2 8.8 4 4.5 0.4 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6.7 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 3.6 — pF FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier, Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF N - CDMA Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz) N - CDMA Drain Efficiency (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Input Return Loss (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz) N - CDMA Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz) N - CDMA Drain Efficiency (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Input Return Loss (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Each side of device measured separately. (2) Device measured in push - pull configuration. Gps 15.8 16.5 — dB η 23 25.5 — % ACPR — - 46.2 - 45 dBc IRL 9 17.5 — dB Gps — 16.5 — dB η — 25.5 — % ACPR — - 47.5 — dBc IRL — 15 — dB Ψ No Degradation In Output Power MRF9210R3 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. Table 1. 880 MHz Test Circuit Component Designations and Values Part B.


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