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FGL40N120AN

Fairchild Semiconductor

1200V NPT IGBT

FGL40N120AN 1200V NPT IGBT FGL40N120AN 1200V NPT IGBT July 2007 IGBT® Features • High speed switching • Low saturatio...


Fairchild Semiconductor

FGL40N120AN

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FGL40N120AN 1200V NPT IGBT FGL40N120AN 1200V NPT IGBT July 2007 IGBT® Features High speed switching Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A High input impedance Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). GC E TO-264 Absolute Maximum Ratings Symbol Parameter VCES VGES IC ICM(1) PD SCWT TJ TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @TC = 25°C @TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125°C Operating Junction Temperature @TC = 25°C @TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 seconds Notes: (1) Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient C G E FGL40N120AN 1200 ±25 64 40 160 500 200 10 -55 to +150 -55 to +150 300 Units V V A A A W W µs °C °C °C Typ. --- Max. 0.25 25 Units °C/W °C/W ©2007 Fairchild Semiconductor Corporation FGL40N120AN Rev. A1 1 www.fairchildsemi.com ...




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