2N5684 (PNP), 2N5686 (NPN)
High-Current Complementary Silicon Power Transistors
These packages are designed for use in...
2N5684 (
PNP), 2N5686 (
NPN)
High-Current Complementary Silicon Power
Transistors
These packages are designed for use in high-power amplifier and switching circuit applications.
Features
ăHigh Current Capability - IC Continuous = 50 Amperes ăDC Current Gain - hFE = 15ā-ā60 @ IC = 25 Adc ăLow Collector-Emitter Saturation Voltage -
ąVCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
ăPb-Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C
Symbol VCEO VCB VEB
IC IB PD
Value 80 80 5.0 50 15 300
1.715
Unit Vdc Vdc Vdc Adc Adc mW mW/°C
Operating and Storage Temperature Range
TJ, Tstg -ā65 to +ā200 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
qJC
0.584
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data.
300
250
200
150
http://onsemi.com
50 AMPERE COMPLEMENTARY SILICON
POWER
TRANSISTORS 60-80 VOLTS, 300 WATTS
MARKING DIAGRAM
TO-204 (TO-3) CASE 197A STYLE 1
2N568xG AYYWW
MEX
2N568x
G A YY WW MEX
= Device Code x = 4 or 6
= Pb-Free Package = Location Code = Year = Work Week = Cou...
