STV160NF03LA

www.DataSheet4U.com N-CHANNEL 30V - 0.0021Ω - 160A PowerSO-10 STripFET™ POWER MOSFET TYPE STV160NF03LA s s s s s s s STV160NF03LA VDSS 30 V RDS(on) < 0.003 Ω ID 160 A TYPICAL RDS(on) = 0.0021 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE 10 1 PowerSO-10 INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The STV160NF03LA represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial APPLICATIONS s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs DCDC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(**) ID IDM (q) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature CONNECTION DIAGRAM (TOP VIEW) Value 30 30 ± 15 160 113 640 210 1.4 330 –...