STD65N55F3

STD65N55F3 Datasheet Automotive-grade N-channel 55 V, 6.5 mΩ typ., 80 A STripFET F3 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475v1_noZen Features Type STD65N55F3 VDS 55 V RDS(on) max. 8.5 mΩ ID 80 A PTOT 110 W AEC-Q101 qualified 100% avalanche tested Applications Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Product status STD65N55F3 Product summary Order code STD65N55F3 Marking 65N55F3 Package DPAK Packing Tape and reel DS5128 - Rev 5 - January 2019 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery EAS(3) Single pulse avalanche energy Tj Operating junction temperature range Tstg Storage temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 65A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ Tjmax 3. Starting Tj = 25°C, ID = 32 A, VDD = 25 V Table 2. Thermal resistance Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-pcb(1) Thermal resistance junction-pcb 1...