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STB3NC60

ST Microelectronics
Part Number STB3NC60
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Mar 29, 2007
Detailed Description ® STB3NC60 N - CHANNEL 600V - 3.3Ω - 3A - D2PAK/I2PAK PowerMESH™ ΙΙ MOSFET TYPE STB3NC60 ν ν ν ν ν VDSS 600 V R DS(o...
Datasheet PDF File STB3NC60 PDF File

STB3NC60
STB3NC60

Overview
® STB3NC60 N - CHANNEL 600V - 3.
3Ω - 3A - D2PAK/I2PAK PowerMESH™ ΙΙ MOSFET TYPE STB3NC60 ν ν ν ν ν VDSS 600 V R DS(on) < 3.
6 Ω ID 3A TYPICAL RDS(on) = 3.
3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 12 1 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ .
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ν SWITCH MODE POWER SUPPLIES (SMPS) ν DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPT...


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