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SST36VF1601E

SST

(SST36VF1601E / SST36VF1602E) 16 Mbit (x8/x16) Concurrent SuperFlash

www.DataSheet4U.com 16 Mbit (x8/x16) Concurrent SuperFlash SST36VF1601E / SST36VF1602E SST36VF1601E / 1602E16Mb (x8/x16...


SST

SST36VF1601E

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www.DataSheet4U.com 16 Mbit (x8/x16) Concurrent SuperFlash SST36VF1601E / SST36VF1602E SST36VF1601E / 1602E16Mb (x8/x16) Concurrent SuperFlash Data Sheet FEATURES: Organized as 1M x16 or 2M x8 Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601E: 12 Mbit + 4 Mbit – 16 Mbit Top Sector Protection - SST36VF1602E: 4 Mbit + 12 Mbit Single 2.7-3.6V for Read and Write Operations Superior Reliability – Endurance: 100,000 cycles (typical) – Greater than 100 years Data Retention Low Power Consumption: – Active Current: 6 mA typical – Standby Current: 4 µA typical – Auto Low Power Mode: 4 µA typical Hardware Sector Protection/WP# Input Pin – Protects the 4 outermost sectors (8 KWord) in the larger bank by driving WP# low and unprotects by driving WP# high Hardware Reset Pin (RST#) – Resets the internal state machine to reading array data Byte# Pin – Selects 8-bit or 16-bit mode Sector-Erase Capability – Uniform 2 KWord sectors Chip-Erase Capability Block-Erase Capability – Uniform 32 KWord blocks Erase-Suspend / Erase-Resume Capabilities Security ID Feature – SST: 128 bits – User: 128 bits Fast Read Access Time – 70 ns Latched Address and Data Fast Erase and Program (typical): – Sector-Erase Time: 18 ms – Block-Erase Time: 18 ms – Chip-Erase Time: 35 ms – Program Time: 7 µs Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling – Ready/Busy# pin ...




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