SST36VF1601

www.DataSheet4U.com 16 Mbit Concurrent SuperFlash SST36VF1601 SST36V160116Mb (x16) Concurrent SuperFlash Data Sheet FEATURES: Organized as 1M x16 Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit Single 2.7-3.6V for Read and Write Operations Superior Reliability – Endurance: 100,000 cycles (typical) – Greater than 100 years Data Retention Low Power Consumption: – Active Current: 25 mA – Standby Current: 4 µA Hardware Sector Protection/WP# Input Pin – Protects 4 outermost sectors (4 KWord) in the larger bank by driving WP# low and unprotects by driving WP# high Hardware Reset Pin (RST#) – Resets the internal state machine to reading array data Sector-Erase Capability – Uniform 1 KWord sectors Block-Erase Capability – Uniform 32 KWord blocks Fast Read Access Time – 70 ns Latched Address and Data Fast Erase and Word-Program (typical): – Sector-Erase Time: 18 ms – Block-Erase Time: 18 ms – Chip-Erase Time: 70 ms – Word-Program Time: 14 µs – Chip Rewrite Time: 8 seconds Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling – Ready/Busy# pin CMOS I/O Compatibility Conforms to Common Flash Memory Interface (CFI) JEDEC Standards – Flash EEPROM Pinouts and command sets Packages Available – 48-lead TSOP (12mm x 20mm) – 48-ball TFBGA (8mm x 10mm) PRODUCT DESCRIPTION The SST36VF1601 is 1M x16 CMOS Concurrent Read/ Write Flash M...