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STB160N75F3 STP160N75F3 - STW160N75F3
N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh...
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STB160N75F3 STP160N75F3 - STW160N75F3
N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh™ low voltage Power MOSFET
TARGET SPECIFICATION
General features
Type STB160N75F3 STP160N75F3 STW160N75F3 VDSS 75V 75V 75V RDS(on) 4.2mΩ 4.5mΩ 4.5mΩ ID 120A (1)
3
120A (1) 120A
(1)
1
2
TO-220
TO-247
1. Current limited by package ■ ■
Ultra low on-resistance 100% Avalanche tested
3 1
D²PAK
Description
This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™“strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number STB160N75F3 STP160N75F3 STW160N75F3 Marking 160N75F3 160N75F3 160N75F3 Package D²PAK TO-220 TO-247 Packaging Tape & reel Tube Tube
February 2007
Rev 1
1/13
www.st.com 13
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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Contents
STB160N75F3 - STP160N75F3 - STW160N75F3
Contents
1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Te...