N-Channel MOSFET
FCH47N60 — N-Channel SuperFET® MOSFET
FCH47N60
N-Channel SuperFET® MOSFET
600 V, 47 A, 70 mΩ
Features
• 650 V @ TJ = 15...
Description
FCH47N60 — N-Channel SuperFET® MOSFET
FCH47N60
N-Channel SuperFET® MOSFET
600 V, 47 A, 70 mΩ
Features
650 V @ TJ = 150°C Typ. RDS(on) = 58 mΩ Ultra Low Gate Charge (Typ. Qg = 210 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) 100% Avalanche Tested RoHS Compliant
Applications
Solar Inverter AC-DC Power Supply
December 2013
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D
G D S
TO-247
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
Parameter
Drain to Source Voltage
Drain Current Drain Current
Continuous (TC = 25°C) Continuous (TC = 100°C) Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD Power Dissipation
(TC = 25°C) Derate Above 25°C
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC Rθ...
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