K8D1716UTB

K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft Draft Date July 25, 2004 Remark Advance 1 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory FEATURES Single Voltage, 2.7V to 3.6V for Read and Write operations Organization 1,048,576 x 16 bit (Word mode) Fast Read Access Time : 70ns Read While Program/Erase Operation Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb Secode(Security Code) Block : Extra 64K Byte block Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby Mode/Auto Sleep Mode : 5µA WP/ACC input pin - Allows special protection of two outermost boot blocks at VIL, regardless of block protect status - Removes special protection of two outermost boot block at VIH, the two blocks return to normal block protect status - Program time at VHH : 9µs/word Erase Suspend/Resume Unlock Bypass Program Hardware RESET Pin Command Register Operation Block Group Protection / Unprotection Supports Common Flash Memory Interface Industrial Temperature : -40°C to 85°C Endurance : 100,000 Program/Erase Cycles Minimum Data Retention : 10 years Package : 48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch FLASH MEMORY GENERAL DESCRIPTION The K8D1716U featuring single 3.0V power supply, is a 16M...