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MRF6S21100NBR1

Part Number	MRF6S21100NBR1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Mar 23, 2007
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 2, 1/2007 RF Power Field...
Datasheet	MRF6S21100NBR1 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev.
2, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA, Pout = 23 Watts Avg.
, Full Frequency Band, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 14.
5 dB Drain Efficiency — 25.
5% IM3 @ 10 MHz Offset — - 37 dBc in 3...

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MRF6S21100NBR1 RF Power Field Effect Transistors - Freescale Semiconductor

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