MA736

www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2Q736 (MA736) Silicon epitaxial planar type Unit: mm 2.5±0.3 2 2.15±0.3 1.2±0.4 1.2±0.4 5.0+0.4 –0.1 8° 1 8° 0.25+0.1 –0.05 For high frequency rectification I Features IF(AV) = 1 A rectification is possible VR = 40 V is guaranteed Automatic insertion with the emboss taping is possible New Mini-power 2-pin package 4.4±0.3 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Average forward current *1 Non-repetitive peak forwardsurge-current *2 Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 40 40 1 30 −40 to +125 −40 to +125 Unit V V A A °C °C 1.4±0.2 0 to 0.05 1 : Anode 2 : Cathode NMiniP2-J1 Package Marking Symbol: PB Note) *1: With a printed circuit board (copper foil area 2 mm × 2 mm or more on both cathode and anode sides) 2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) * I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time * Symbol IR VF Ct trr VR = 40 V IF = 1 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 50 30 Conditions Min Typ Max 2 0.55 Unit mA V pF ns Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 20 MHz 3. *: trr measuring ...