FQP13N50CF

www.DataSheet4U.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET May 2006 FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V Low gate charge (typical 43 nC) Low Crss (typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode (typical 100ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series GD S TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 2) (Note 1) (Note 1) (Note 3) Parameter FQP13N50CF 13 8 (Note 1) FQPF13N50CF 500 13* 8* 52* ± 30 530 13 19.5 4.5 Unit V A A A V mJ A m...