SI1058X

N-Channel 20 V (D-S) MOSFET Si1058X Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.091 at VGS = 4.5 V 0.124 at VGS = 2.5 V ID (A) 1.3a 1.1 Qg (Typ.) 3.5 FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load Switch for Portable Devices SC-89 (6-LEADS) D1 6D D2 5D G3 4S Marking Code T WL Lot Traceability and Date Code Part Number Code Top View Ordering Information: Si1058X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 1.3b, c 1.03b, c Pulsed Drain Current IDM 6 Avalanche Current Repetitive Avalanche Energy L = 0.1 mH IAS EAS 7 2.45 Continuous Source-Drain Diode Current TA = 25 °C IS 0.2b, c Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 0.236b, c 0.151b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t 5 s Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. Symbol RthJA Typical 440 540 Maximum 530 650 Unit °C/W Document Number: 73894 For technical question, contact: pmostechsup...