BSS98

www.DataSheet4U.com BSS 98 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...1.6 V Pin 1 S Type Pin 2 G Marking Pin 3 D VDS 50 V ID 0.3 A RDS(on) 3.5 Ω Package BSS 98 Type BSS 98 BSS 98 BSS 98 TO-92 SS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Symbol Values Unit Drain source voltage Drain-gate voltage RGS = 20 kΩ VDS V DGR 50 V 50 VGS Gate source voltage ESD Sensitivity as per MIL-STD 883 Continuous drain current TA = 25 ˚C ± 20 Class 1 A 0.3 ID DC drain current, pulsed TA = 25 ˚C IDpuls 1.2 Ptot Power dissipation TA = 25 ˚C W 0.63 Data Sheet 1 05.99 BSS 98 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 200 E 55 / 150 / 56 K/W Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 50 - Gate threshold voltage VGS=V DS, ID = 1 mA V GS(th) 0.8 IDSS 1.2 1.6 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 125 ˚C VDS = 30 V, VGS = 0 V, Tj = 25 ˚C IGSS 0.05 - 0.5 5 100 µA nA nA Gate-source leakage...