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2N2605 Dataheets PDF



Part Number 2N2605
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description (2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR
Datasheet 2N2605 Datasheet2N2605 Datasheet (PDF)

www.DataSheet4U.com TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices 2N2604 2N2605 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PT TJ, Tstg Symbol RθJC 2N2604 80 2N2605 70 Units Vdc Vdc Vdc mAdc mW/0C 0 C Unit C/mW @ TA = +250C(1) Operating & Storage Junction Temperature Range 60 6.0 30 400 -65 to +20.

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www.DataSheet4U.com TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices 2N2604 2N2605 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PT TJ, Tstg Symbol RθJC 2N2604 80 2N2605 70 Units Vdc Vdc Vdc mAdc mW/0C 0 C Unit C/mW @ TA = +250C(1) Operating & Storage Junction Temperature Range 60 6.0 30 400 -65 to +200 Max. 0.437 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.28 mW/0C above TA = +250C 0 TO-46* (TO-206AB) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 10 µAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc Emitter-Base Breakdown Current IE = 10 µAdc Collector-Base Cutoff Current VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 50 Vdc 2N2604 2N2605 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES 80 70 60 6.0 10 2.0 10 Vdc Vdc Vdc ηAdc ηAdc ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2604, 2N2605 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 5.0 Vdc IC = 500 µAdc, VCE = 5.0 Vdc IC = 10 mAdc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 500 µAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 500 µAdc 2N2604 2N2605 2N2604 2N2605 2N2604 2N2605 40 100 60 150 40 100 120 300 180 450 160 400 0.3 0.7 0.9 Vdc Vdc hFE VCE(sat) VBE(sat) DYNAMIC CHARACTERISTICS Small-Signal Short-Circuit Input Impedance IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz Small-Signal Open-Circuit Output Admittance IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz 2N2604 2N2605 hie 1.0 2.0 10 20 40 60 60 150 1.0 180 450 8.0 6.0 pF kΩ µmhos 2N2604 2N2605 Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f= 1.0 kHz 2N2604 2N2605 Magnitude of Small-Signal Forward Current Transfer Ratio IC = 0.5 mAdc, VCE = 5.0 Vdc, f = 30 MHz Output Capacitance VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Noise Figure VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 kΩ, f = 100 Hz VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 kΩ, f = 1.0 kHz VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 kΩ, f = 10 kHz (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. hoe hfe hfe Cobo F1 F2 F3 5.0 3.0 3.0 dB 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 .


2N2604 2N2605 3628A


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