2N2604

www.DataSheet4U.com TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices 2N2604 2N2605 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PT TJ, Tstg Symbol RθJC 2N2604 80 2N2605 70 Units Vdc Vdc Vdc mAdc mW/0C 0 C Unit C/mW @ TA = +250C(1) Operating & Storage Junction Temperature Range 60 6.0 30 400 -65 to +200 Max. 0.437 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.28 mW/0C above TA = +250C 0 TO-46* (TO-206AB) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 10 µAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc Emitter-Base Breakdown Current IE = 10 µAdc Collector-Base Cutoff Current VCB = 50 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 50 Vdc 2N2604 2N2605 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES 80 70 60 6.0 10 2.0 10 Vdc Vdc Vdc ηAdc ηAdc ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2604, 2N2605 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 5.0 Vdc IC = 500 µAdc, ...