RB751V40T1

www.DataSheet4U.com RB751V40T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Extremely Low Forward Voltage – 0.28 Volts (Typ) @ IF = 1 mAdc Low Reverse Current http://onsemi.com 40 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE MAXIMUM RATINGS Rating Peak Reverse Voltage Reverse Voltage Electrostatic Discharge Symbol VRM VR ESD Value 40 30 Unit V Vdc 1 2 HBM Class: 1C MM Class: A THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1. FR–5 Minimum Pad Symbol PD Max 200 1.57 RqJA TJ, Tstg 635 –55 to +150 Unit mW mW/°C °C/W °C SOD–323 CASE 477 PLASTIC MARKING DIAGRAMS 5E M 5E M = Specific Device Code = Date Code ORDERING INFORMATION Device RB751V40T1 Package SOD–323 Shipping 3000/Tape & Reel © Semiconductor Components Industries, LLC, 2001 1 May, 2001 – Rev. 1 Publication Order Number: RB751V40T1/D RB751V40T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 30 V) Forward Voltage (IF = 1.0 mAdc) Symb...