DatasheetsPDF.com

MRF5S19100HSR3

Part Number	MRF5S19100HSR3
Manufacturer	Motorola
Description	The RF MOSFET Line RF Power Field Effect Transistors
Published	Feb 26, 2007
Detailed Description	com Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 4, 5/2006 RF Power Field...
Datasheet	MRF5S19100HSR3 PDF File

Overview

com Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev.
4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
• Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg.
, Full Frequency Band.
IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 13.
9 dB Drain Efficiency — 25.
5% IM3 @ 2.
5 MHz Offset — - 36.
5 dBc in 1.
2288 MHz Channel Band...

Similar Datasheet

MRF5S19100HSR3 The RF MOSFET Line RF Power Field Effect Transistors - Motorola

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)