SD1405

www.DataSheet4U.com SD1405 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . 30 MHz 12.5 VOLTS COMMON EMITTER IMD −32 dB GOLD METALLIZATION P OUT = 75 W MIN. WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1405 BRANDING SD1405 PIN CONNECTION DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes diffused emitter resistors to achieve infinte VSWR under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 36 18 4.0 20 270 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance July 1993 0.65 °C/W 1/4 SD1405 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICES hFE IC = 50 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 15 V VCE = 5 V IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 5 A 36 36 18 4.0 — 20 — — — — — — — — — — 15 300 V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD* COB Note: *P OUT f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz = 60WP EP, fO PIN = 3.8 W PIN = 3.8 W VCE = 12.5 V VCB = 12 V = 30 + 30.001 MHz VCE = 12.5 V VCE = 12.5 V...