MMBFJ271

www.DataSheet4U.com MMBFJ271 P-Channel Switch June 2006 MMBFJ271 P-Channel Switch Features This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from process 88. S D G tm SOT-23 Mark : 62T Absolute Maximum Ratings * Symbol VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Ta = 25°C unless otherwise noted Parameter Value -30 30 50 -55 ~ 150 Units V V mA °C Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. - These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Value 225 1.8 556 Units mW mW/°C °C/W Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics Symbol Parameter Off Characteristics (Note3) V(BR)GSS IGSS VGS(off) TC = 25°C unless otherwise noted Test Condition MIN MAX Units Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = 1.0µA, VDS = 0 VGS = 20V, VDS = 0 VDS = -15V, ID = -1.0nA 30 200 1.5 4.5 V pA V On Characteristics (Note3) IDSS gfs goss Zero-Gate Voltage Drain Current * Forward Transferconductance VDS = -15V, VGS = 0 VGS = 0V, VDS = 15V, f = 1.0kHz -6.0 8000...