STP8NK100Z

www.DataSheet4U.com STF8NK100Z STP8NK100Z N-CHANNEL 1000V - 1.60Ω - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH™ MOSFET General features Type VDSS RDS(on) ID Pw STF8NK100Z 1000 V <1.85 Ω 6.5 A Note 1 40 W STP8NK100Z 1000 V <1.85 Ω 6.5 A 160 W ■ ■ ■ ■ EXTREMELY HIGH dv/dt CAPABILITY 3 3 1 2 100% AVALANCHE RATED IMPROVED ESD CAPABILITY VERY LOW INTRINSIC CAPACITANCE TO-220 1 2 TO-220FP Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Internal schematic diagram Applications ■ ■ HIGH CURRENT,SWITCHING APPLICATION IDEAL FOR OFF-LINE POWER SUPPLIES Order codes Sales Type STF8NK100Z STP8NK100Z Marking F8NK100Z P8NK100Z Package TO-220FP TO-220 Packaging TUBE TUBE November 2005 Rev 1 1/13 www.st.com 13 1 Electrical ratings STF8NK100Z - STP8NK100Z 1 Table 1. Electrical ratings Absolute maximum ratings Parameter TO-220 VDS VDGR VGS ID Note 1 ID Drain-source Voltage (VGS=0) Drain-gate Voltage Gate-Source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ) 6.5 4.3 16 160 1....